陀螺**霍尔元件 微功耗霍尔 全级霍尔 高频低耗LH253 LH251

LH8253MH253 Hall-effect sensor is a temperature stable, stress-resistant switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress.
 
LH8MH includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-** amplifier, chopper stabilization, Schmitt trigger, open-drain output. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries.
 
LHMH8 is rated for operation between the ambient temperatures –40℃ and +85℃ for the E temperature range. The four package styles available provide magnetically optimized solutions for most applications. Package types SO is an SOT-23(1.1 mm nominal height), SQ is an QFN2020-3(0.55 mm nominal height), a miniature low-profile surface-mount package, while package UA is a three-lead ultra mini SIP for through-hole mounting.
 
The package type is in aHalogen Free version was verified by third party Lab.
 
Features and Benefits
 
l CMOS Hall IC Technology
 
l Solid-State Reliability much better than reed switch
 
l Omni polar output switches with absolute value of North or South pole from magnet
 
l Low power consumption(2.6mA)
 
l High Sensitivity for reed switch replacement
 
l ** tested at 125℃ for K.
 
l Small Size
 
l ESD HBM ±4KV Min
 
l COST competitive
 
Applications
 
l Solid state switch
 
l Lid close sensor for power supply devices
 
l Magnet proximity sensor for reed switch replacement in high duty cycle applications.
 
l Safety Key on sporting equipment
 
l Revolution counter
 
l Speed sensor
 
l Position Sensor
 
l Rotation Sensor
 
l Safety Key
 
 
 
 
 
 
091713Page 1Rev. 1.04
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
型号LH8253
 
 
 
 
 
 
 
 
 
 
Note:Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-
 
 
rated conditions for extended periods may affect device reliability.
 
 
 
 
 
 
 
 
 
 
 
 
Electrical Specifications
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
DC Operating Parameters TA=+25℃, VDD=5.0V
 
 
 
 
 
 
 
 
 
 
 
 
Parameters
 
 
 
Test Conditions
 
Min
 
Typ
Max
 
Units
 
 
Supply Voltage,(VDD)
 
 
Operating
 
2.5
 
 
6
 
 
V
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Supply Current,(IDD)
 
 
Average
 
 
 
2.6
6.0
 
 
mA
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Output Low Voltage,(VDSON)
 
IOUT=10mA
 
 
 
 
400
 
 
mV
 
 
Output Leakage Current,(Ioff)
 
IOFF
BOUT = 5V
 
 
 
 
10
 
 
uA
 
 
Output Rise Time,(TR)
 
 
RL=10kΩ, CL =20pF
 
 
 
 
0.45
 
 
uS
 
 
Output Fall Time,(TF)
 
 
RL=10kΩ; CL =20pF
 
 
 
 
0.45
 
 
uS
 
 
Electro-Static Discharge
 
HBM
 
 
 
 
4
 
 
 
 
 
 
KV
 
 
Operate Point,
(BOPS)
S pole to branded side, B > BOP, Vout On
 
 
 
30
60
 
 
Gauss
 
 
(BOPN)
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
N pole to branded side, B > BOP, Vout On
 
-60
 
-30
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Release Point
(BRPS)
 
S pole to branded side, B < BRP, Vout Off
 
5
 
25
 
 
 
 
Gauss
 
 
(BRPN)
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
N pole to branded side, B < BRP, Vout Off
 
 
 
-25
-5
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Hysteresis,(BHYS)
 
 
|BOPx - BRPx|
 
 
 
5
 
 
 
 
Gauss
 
联系人：常艳云
联系电话:15206458696